Backside connection to TSVs having redistribution lines

Details Backside connection to TSVs having redistribution lines Backside connection to TSVs having redistribution lines

2011-06-07

2011-06-07

Mandala, Victor (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Physical configuration of semiconductor

With electrical contact in hole in semiconductor

C257S766000, C257S774000, C257SE23011, C257SE23174

Reexamination Certificate

active

07956442

ABSTRACT:
An integrated circuit structure includes a semiconductor substrate including a front side and a backside. A through-silicon via (TSV) penetrates the semiconductor substrate, and has a back end extending to the backside of the semiconductor substrate. A redistribution line (RDL) is over the backside of the semiconductor substrate and connected to the back end of the TSV. The integrated circuit structure further includes a passivation layer over the RDL; an opening in the passivation layer, wherein a portion of the RDL is exposed through the opening; and a nickel layer in the opening and contacting the RDL.

REFERENCES:
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Shen, L-C, et al., “A Clamped Through Silicon Via (TSV) Interconnection for Stacked Chip Bonding Using Metal Cap on Pad and Metal Column Forming in Via,” 2008, IEEE, pp. 544-549.

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