Automatic rejection of diffraction effects in thin film metrolog

Details Automatic rejection of diffraction effects in thin film metrolog Automatic rejection of diffraction effects in thin film metrolog

1994-12-21

1996-09-10

Pham, Hoa Q.

Optics: measuring and testing

By configuration comparison

With photosensitive film or plate

356382, G01B 1106

Patent

active

055554741

ABSTRACT:
A layer thickness determination system (10) is employed for detecting a thickness of at least one layer (12a) disposed over a surface of a wafer (13) having one or more first regions characterized by circuit and other features, and one or more second regions characterized by an absence of circuit and other features. The system includes an optical system (14) having an optical axis (14a) for collecting light reflecting from the at least one layer and the surface of the wafer. The system further includes a camera (16) coupled to the optical system for obtaining an image from the collected light; a first light source (22) for illuminating the layer with light that is directed along the optical axis and within the cone of acceptance angles; and at least one second light source (18) for illuminating the layer with light that is directed off the optical axis and outside of the cone of acceptance angles. A data processor operates to generate an image mask that differentiates planar film regions from non-planar film regions, and, in one embodiment, further operates to detect a thickness of the at least one layer only within the planar film regions.

REFERENCES:
patent: 3693025 (1972-09-01), Brunton
patent: 3870884 (1975-03-01), Williams
patent: 5291269 (1994-03-01), Ledger
patent: 5293214 (1994-03-01), Ledger
patent: 5333049 (1994-07-01), Ledger
patent: 5436725 (1995-07-01), Ledger
patent: 5452953 (1995-09-01), Ledger

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