Static information storage and retrieval – Read/write circuit – Erase
Patent
1990-12-31
1993-05-25
LaRoche, Eugene R.
Static information storage and retrieval
Read/write circuit
Erase
36518909, 36523006, G11C 700
Patent
active
052146057
ABSTRACT:
There is provided an automatic erasing optimization circuit for an flash-type EEPROM including an erase sense means connected between the column decoder and the data input/output buffer for sensing the output state of the column decoder in response to a write enable signal and erasing signal to generate signals of opposite logics, a sequential output means consisting of a first, second and third resistors connected in series and receiving the output signals of the erasing sense means to respectively generate a first, second and third high voltage level control signals, a high voltage generating circuit for generating a high voltage equal to or greater than a given level to both the row decoder and the program latch circuit in response to pump clock pulses and the first, second and third high voltage level control signals, and an address counter for supplying the address buffer with address counting counting clock pulses in response to the output signal of the erasing sense means.
REFERENCES:
patent: 4408306 (1983-10-01), Kuo
patent: 4460982 (1984-07-01), Gee et al.
patent: 4648076 (1987-03-01), Schrenk
patent: 4888738 (1989-12-01), Wong et al.
patent: 4977543 (1990-12-01), Kouzi
patent: 5051953 (1991-09-01), Kitazawa et al.
Lee Wung-Moo
Lim Hyeong-Gyu
Bushnell Robert E.
Dinh Son
LaRoche Eugene R.
Samsung Electronics Co,. Ltd.
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