Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-07-10
2007-07-10
Lindsay, Jr., Walter (Department: 2812)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S106000, C438S108000, C438S118000, C438S119000, C438S613000, C438S614000, C438S615000, C438S616000, C438S617000, C257SE21503
Reexamination Certificate
active
10798540
ABSTRACT:
Vias (210, 210B) are formed in a surface of a substrate. At least portions of contact pads (139, 350) are located in the vias. Contact pads (150, 340) of an integrated circuit structure are inserted into the vias and attached to the contact pads (139, 350) of the substrate. The vias provide a strong, reliable mechanical and electrical connection. A via may expose not only a contact pad (350) in the substrate but also a surrounding region. Solder (930) wets the contact pad better than the surrounding region, resulting in a stronger solder joint and better electrical conductivity. Alternatively, the contact may include multiple conductive layers (910.1, 910.2), with the top layer (910.2) being more solder wettable than the bottom layer (910.1) and the top layer covering only a portion of the bottom layer.
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Kao Sam
Savastiouk Sergey
Lee Kyoung
Lindsay, Jr. Walter
MacPherson Kwok & Chen & Heid LLP
Shenker Michael
Tru-Si Technologies Inc.
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