Atomic layer deposition tantalum nitride layer to improve...

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Reexamination Certificate

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C438S685000, C438S687000

Reexamination Certificate

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10420311

ABSTRACT:
A process for improving the adhesion between an underlying copper structure, and overlying materials and structures, has been developed. The process features formation of a tantalum nitride layer on a copper structure, wherein the copper structure is located in a damascene type opening. To obtain the maximum adhesion benefit the tantalum nitride layer is formed via an atomic deposition layer procedure, performed at specific deposition conditions. The adhesion between the underlying copper structure and overlying materials such as a silicon nitride etch stop layer, as well the adhesion between the lower level copper structure and overlying upper level metal interconnect structures, is improved as a result of the presence of the atomic layer deposited tantalum nitride layer.

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