Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-04-10
2007-04-10
Ghyka, Alexander (Department: 2812)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S685000, C438S687000
Reexamination Certificate
active
10420311
ABSTRACT:
A process for improving the adhesion between an underlying copper structure, and overlying materials and structures, has been developed. The process features formation of a tantalum nitride layer on a copper structure, wherein the copper structure is located in a damascene type opening. To obtain the maximum adhesion benefit the tantalum nitride layer is formed via an atomic deposition layer procedure, performed at specific deposition conditions. The adhesion between the underlying copper structure and overlying materials such as a silicon nitride etch stop layer, as well the adhesion between the lower level copper structure and overlying upper level metal interconnect structures, is improved as a result of the presence of the atomic layer deposited tantalum nitride layer.
REFERENCES:
patent: 6004188 (1999-12-01), Roy
patent: 6083822 (2000-07-01), Lee
patent: 6090696 (2000-07-01), Jang et al.
patent: 6093632 (2000-07-01), Lin
patent: 6197688 (2001-03-01), Simpson
patent: 6365527 (2002-04-01), Yang et al.
patent: 6391780 (2002-05-01), Shih et al.
patent: 6403459 (2002-06-01), Ohashi et al.
patent: 2003/0057526 (2003-03-01), Chung et al.
patent: 2003/0134495 (2003-07-01), Gates et al.
Liang Mong Song
Lin Jing-Cheng
Peng Chao-Hsien
Shue Shau Lin
Ghyka Alexander
Haynes & Boone LLP
Taiwan Semiconductor Manufacturing Company , Ltd.
LandOfFree
Atomic layer deposition tantalum nitride layer to improve... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Atomic layer deposition tantalum nitride layer to improve..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Atomic layer deposition tantalum nitride layer to improve... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3798504