Atomic layer deposition of titanium using batch type chamber...

Details Atomic layer deposition of titanium using batch type chamber... Atomic layer deposition of titanium using batch type chamber...

2006-11-07

2006-11-07

Smith, Bradley K. (Department: 2891)

Semiconductor device manufacturing: process

Making passive device

Stacked capacitor

C438S395000, C438S775000

Reexamination Certificate

active

07132346

ABSTRACT:
The present invention relates to a method for fabricating a capacitor employing ALD-TiN as an upper electrode and being suitable for preventing a deterioration of a leakage current property which uses an ALD-TiN as an upper electrode. The method for fabricating the capacitor includes: forming a lower electrode on a semiconductor substrate; forming a dielectric layer on the lower electrode; loading the semiconductor substrate containing the dielectric layer into a deposition chamber; nitriding a surface of the dielectric layer while NH3gas is flowed into the deposition chamber; and forming an upper layer by using a source gas NH3, containing Titanium (Ti) on the nitrated surface of the dielectric layer through an atomic layer deposition (ALD) method.

REFERENCES:
patent: 6489214 (2002-12-01), Kim et al.
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patent: 6551399 (2003-04-01), Sneh et al.
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patent: 2003/0003649 (2003-01-01), Park et al.
patent: 2004/0033661 (2004-02-01), Yao et al.

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