Atomic layer deposition of tantalum based barrier materials

Details Atomic layer deposition of tantalum based barrier materials Atomic layer deposition of tantalum based barrier materials

2007-05-01

2007-05-01

Toledo, Fernando L. (Department: 2823)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S625000, C438S627000, C438S637000, C438S640000, C438S681000

Reexamination Certificate

active

10871864

ABSTRACT:
Methods for processing substrate to deposit barrier layers of one or more material layers by atomic layer deposition are provided. In one aspect, a method is provided for processing a substrate including depositing a metal nitride barrier layer on at least a portion of a substrate surface by alternately introducing one or more pulses of a metal containing compound and one or more pulses of a nitrogen containing compound and depositing a metal barrier layer on at least a portion of the metal nitride barrier layer by alternately introducing one or more pulses of a metal containing compound and one or more pulses of a reductant. A soak process may be performed on the substrate surface before deposition of the metal nitride barrier layer and/or metal barrier layer.

REFERENCES:
patent: 4389973 (1983-06-01), Suntola et al.
patent: 4413022 (1983-11-01), Suntola et al.
patent: 4486487 (1984-12-01), Skarp
patent: 5306666 (1994-04-01), Izumi
patent: 5374570 (1994-12-01), Nasu et al.
patent: 5526244 (1996-06-01), Bishop
patent: 5711811 (1998-01-01), Suntola et al.
patent: 5804488 (1998-09-01), Shih et al.
patent: 5834372 (1998-11-01), Lee
patent: 5916365 (1999-06-01), Sherman
patent: 5923056 (1999-07-01), Lee et al.
patent: 6015590 (2000-01-01), Suntola et al.
patent: 6015917 (2000-01-01), Bhandari et al.
patent: 6042652 (2000-03-01), Hyun et al.
patent: 6084302 (2000-07-01), Sandhu
patent: 6124158 (2000-09-01), Dautartas et al.
patent: 6139700 (2000-10-01), Kang et al.
patent: 6144060 (2000-11-01), Park et al.
patent: 6174809 (2001-01-01), Kang et al.
patent: 6197683 (2001-03-01), Kang et al.
patent: 6200893 (2001-03-01), Sneh
patent: 6203613 (2001-03-01), Gates et al.
patent: 6207302 (2001-03-01), Sugiura et al.
patent: 6207487 (2001-03-01), Kim et al.
patent: 6218298 (2001-04-01), Hoinkis
patent: 6270572 (2001-08-01), Kim et al.
patent: 6284646 (2001-09-01), Leem
patent: 6287965 (2001-09-01), Kang et al.
patent: 6305314 (2001-10-01), Sneh et al.
patent: 6333260 (2001-12-01), Kwon et al.
patent: 6335280 (2002-01-01), Van der Jeugd
patent: 6342277 (2002-01-01), Sherman
patent: 6348376 (2002-02-01), Lim et al.
patent: 6355561 (2002-03-01), Sandhu et al.
patent: 6358829 (2002-03-01), Yoon et al.
patent: 6368954 (2002-04-01), Lopatin et al.
patent: 6369430 (2002-04-01), Adetutu et al.
patent: 6372598 (2002-04-01), Kang et al.
patent: 6379748 (2002-04-01), Bhandari et al.
patent: 6391785 (2002-05-01), Satta et al.
patent: 6399491 (2002-06-01), Jeon et al.
patent: 6416577 (2002-07-01), Suntoloa et al.
patent: 6416822 (2002-07-01), Chiang et al.
patent: 6420189 (2002-07-01), Lopatin
patent: 6423619 (2002-07-01), Grant et al.
patent: 6428859 (2002-08-01), Chiang et al.
patent: 6447933 (2002-09-01), Wang et al.
patent: 6451119 (2002-09-01), Sneh et al.
patent: 6451695 (2002-09-01), Sneh
patent: 6458701 (2002-10-01), Chae et al.
patent: 6468924 (2002-10-01), Lee et al.
patent: 6475276 (2002-11-01), Elers et al.
patent: 6475910 (2002-11-01), Sneh
patent: 6478872 (2002-11-01), Chae et al.
patent: 6482262 (2002-11-01), Elers et al.
patent: 6482733 (2002-11-01), Raaijmakers et al.
patent: 6482740 (2002-11-01), Soininen et al.
patent: 6511539 (2003-01-01), Raaijmakers
patent: 6534395 (2003-03-01), Werkhoven et al.
patent: 6548424 (2003-04-01), Putkonen
patent: 6551929 (2003-04-01), Kori et al.
patent: 6569501 (2003-05-01), Chiang et al.
patent: 6585823 (2003-07-01), Van Wijck
patent: 6593484 (2003-07-01), Yasuhara et al.
patent: 6596602 (2003-07-01), Iizuka et al.
patent: 6596643 (2003-07-01), Chen et al.
patent: 6599572 (2003-07-01), Saanila et al.
patent: 6607976 (2003-08-01), Chen et al.
patent: 6620723 (2003-09-01), Byun et al.
patent: 6630201 (2003-10-01), Chiang et al.
patent: 6632279 (2003-10-01), Ritala et al.
patent: 6635965 (2003-10-01), Lee et al.
patent: 6660126 (2003-12-01), Nguyen et al.
patent: 6686271 (2004-02-01), Raaijmakers et al.
patent: 6720027 (2004-04-01), Yang et al.
patent: 6740585 (2004-05-01), Yoon et al.
patent: 6784096 (2004-08-01), Chen et al.
patent: 6797340 (2004-09-01), Fang et al.
patent: 6800173 (2004-10-01), Chiang et al.
patent: 6803272 (2004-10-01), Halliyal et al.
patent: 6809026 (2004-10-01), Yoon et al.
patent: 6827978 (2004-12-01), Yoon et al.
patent: 6831004 (2004-12-01), Byun et al.
patent: 6833161 (2004-12-01), Wang et al.
patent: 6838125 (2005-01-01), Chung et al.
patent: 6849545 (2005-02-01), Mak et al.
patent: 6855368 (2005-02-01), Korl et al.
patent: 6875271 (2005-04-01), Glenn et al.
patent: 6911391 (2005-06-01), Yang et al.
patent: 6936538 (2005-08-01), Byun
patent: 6939801 (2005-09-01), Chung et al.
patent: 6939804 (2005-09-01), Lai et al.
patent: 6951804 (2005-10-01), Seutter et al.
patent: 6958296 (2005-10-01), Chen et al.
patent: 6972267 (2005-12-01), Cao et al.
patent: 6974771 (2005-12-01), Chen et al.
patent: 7026238 (2006-04-01), Xi et al.
patent: 7033922 (2006-04-01), Kori et al.
patent: 7041335 (2006-05-01), Chung
patent: 7049226 (2006-05-01), Chung et al.
patent: 2001/0000866 (2001-05-01), Sneh et al.
patent: 2001/0002280 (2001-05-01), Sneh
patent: 2001/0009140 (2001-07-01), Bondestam et al.
patent: 2001/0009695 (2001-07-01), Saanila et al.
patent: 2001/0024387 (2001-09-01), Raaijmakers et al.
patent: 2001/0025979 (2001-10-01), Kim et al.
patent: 2001/0028924 (2001-10-01), Sherman
patent: 2001/0029094 (2001-10-01), Mee-Young et al.
patent: 2001/0034123 (2001-10-01), Jeon et al.
patent: 2001/0041250 (2001-11-01), Werkhoven et al.
patent: 2001/0050039 (2001-12-01), Park
patent: 2001/0054730 (2001-12-01), Kim et al.
patent: 2001/0054769 (2001-12-01), Raaijmakers et al.
patent: 2002/0000598 (2002-01-01), Kang et al.
patent: 2002/0004293 (2002-01-01), Soininen et al.
patent: 2002/0007790 (2002-01-01), Park et al.
patent: 2002/0009544 (2002-01-01), McFeely et al.
patent: 2002/0019121 (2002-02-01), Pyo
patent: 2002/0020869 (2002-02-01), Park et al.
patent: 2002/0021544 (2002-02-01), Cho et al.
patent: 2002/0031618 (2002-03-01), Sherman
patent: 2002/0037630 (2002-03-01), Argawal et al.
patent: 2002/0041931 (2002-04-01), Suntola et al.
patent: 2002/0048635 (2002-04-01), Kim et al.
patent: 2002/0048880 (2002-04-01), Lee
patent: 2002/0052097 (2002-05-01), Park
patent: 2002/0055235 (2002-05-01), Park
patent: 2002/0060363 (2002-05-01), Xi et al.
patent: 2002/0061612 (2002-05-01), Sandhu et al.
patent: 2002/0068458 (2002-06-01), Chiang et al.
patent: 2002/0073924 (2002-06-01), Chiang et al.
patent: 2002/0074588 (2002-06-01), Lee
patent: 2002/0076481 (2002-06-01), Chiang et al.
patent: 2002/0076507 (2002-06-01), Chiang et al.
patent: 2002/0076508 (2002-06-01), Chiang et al.
patent: 2002/0076837 (2002-06-01), Hujanen et al.
patent: 2002/0081844 (2002-06-01), Jeon et al.
patent: 2002/0086111 (2002-07-01), Byun et al.
patent: 2002/0086507 (2002-07-01), Park et al.
patent: 2002/0090829 (2002-07-01), Sandhu et al.
patent: 2002/0094689 (2002-07-01), Park
patent: 2002/0098627 (2002-07-01), Pomarede et al.
patent: 2002/0104481 (2002-08-01), Chiang et al.
patent: 2002/0105088 (2002-08-01), Yang et al.
patent: 2002/0106536 (2002-08-01), Lee et al.
patent: 2002/0106846 (2002-08-01), Seutter et al.
patent: 2002/0109168 (2002-08-01), Kim et al.
patent: 2002/0115886 (2002-08-01), Yasuhara et al.
patent: 2002/0117399 (2002-08-01), Chen et al.
patent: 2002/0121241 (2002-09-01), Nguyen et al.
patent: 2002/0121342 (2002-09-01), Nguyen et al.
patent: 2002/0121697 (2002-09-01), Marsh
patent: 2002/0135071 (2002-09-01), Kang et al.
patent: 2002/0144655 (2002-10-01), Chiang et al.
patent: 2002/0144657 (2002-10-01), Chiang et al.
patent: 2002/0146511 (2002-10-01), Chiang et al.
patent: 2002/0155722 (2002-10-01), Satta et al.
patent: 2002/0162506 (2002-11-01), Sneh et al.
patent: 2002/0164421 (2002-11-01), Chiang et al.
patent: 2002/0164423 (2002-11-01), Chiang et al.
patent: 2002/0177282 (2002-11-01), Song
patent: 2002/0182320 (2002-12-01), Leskela et al.
patent: 2002/0187256 (2002-12-01), Elers et al.
patent: 2002/0187631 (2002-12-01), Kim et al.
patent: 2002/0197402 (2002-12-01), Chiang et al.
patent: 2002/0197863 (2002-12-01), Mak et al.
patent: 2003/0013300 (2003-01-01), By

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