Atomic layer deposition of hafnium-based high-k dielectric

Details Atomic layer deposition of hafnium-based high-k dielectric Atomic layer deposition of hafnium-based high-k dielectric

2007-04-17

2007-04-17

Everhart, Caridad (Department: 2891)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C257SE21009, C427S255310

Reexamination Certificate

active

10954819

ABSTRACT:
A method of depositing a hafnium-based dielectric film is provided. The method comprises atomic layer deposition using ozone and one or more reactants comprising a hafnium precursor. A semiconductor device is also provided. The device comprises a substrate, a hafnium-based dielectric layer formed atop the substrate, and an interfacial layer formed between the substrate and the hafnium-based dielectric layer, wherein the interfacial layer comprises silicon dioxide and has a crystalline structure.

REFERENCES:
patent: 6787481 (2004-09-01), Asai et al.
patent: 2002/0064970 (2002-05-01), Chooi et al.
patent: 2002/0195643 (2002-12-01), Harada
patent: 2003/0232511 (2003-12-01), Metzner et al.
patent: 2004/0092073 (2004-05-01), Cabral et al.

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