Atomic layer deposition of GdScO3 films as gate dielectrics

Details Atomic layer deposition of GdScO3 films as gate dielectrics Atomic layer deposition of GdScO3 films as gate dielectrics

2005-08-30

2009-06-09

Smith, Zandra (Department: 2822)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

C438S197000, C438S593000

Reexamination Certificate

active

07544596

ABSTRACT:
The use of atomic layer deposition (ALD) to form a nanolaminate dielectric of gadolinium oxide (Gd2O3) and scandium oxide (Sc2O3) acting as a single dielectric layer with a formula of GdScO3, and a method of fabricating such a dielectric layer, is described that produces a reliable structure with a high dielectric constant (high k) for use in a variety of electronic devices. The dielectric structure is formed by depositing gadolinium oxide by atomic layer deposition onto a substrate surface using precursor chemicals, followed by depositing scandium oxide onto the substrate using precursor chemicals, and repeating to form the thin laminate structure. Such a dielectric may be used as gate insulator of a MOSFET, a capacitor dielectric in a DRAM, as tunnel gate insulators in flash memories, or as a NROM dielectric, because the high dielectric constant (high k) of the film provides the functionality of a much thinner silicon dioxide film.

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