Atomic layer deposition of a ruthenium layer to a lanthanide...

Details Atomic layer deposition of a ruthenium layer to a lanthanide... Atomic layer deposition of a ruthenium layer to a lanthanide...

2005-04-28

2010-02-16

Coleman, W. David (Department: 2813)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C257SE21274, C257SE21247

Reexamination Certificate

active

07662729

ABSTRACT:
Electronic apparatus and methods of forming the electronic apparatus include a conductive layer having a layer of ruthenium in contact with a lanthanide oxide dielectric layer for use in a variety of electronic systems. The lanthanide oxide dielectric layer and the layer of ruthenium may be structured as one or more monolayers. The lanthanide oxide dielectric layer and the layer of ruthenium may be formed by atomic layer deposition.

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