Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2011-07-26
2011-07-26
Sarkar, Asok K (Department: 2891)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C257SE21269, C257SE21274, C438S685000
Reexamination Certificate
active
07985679
ABSTRACT:
An atomic layer deposition method includes providing a semiconductor substrate within a deposition chamber. A first metal halide-comprising precursor gas is flowed to the substrate within the chamber effective to form a first monolayer on the substrate. The first monolayer comprises metal and halogen of the metal halide. While flowing the first metal halide-comprising precursor gas to the substrate, H2is flowed to the substrate within the chamber. A second precursor gas is flowed to the first monolayer effective to react with the first monolayer and form a second monolayer on the substrate. The second monolayer comprises the metal. At least some of the flowing of the first metal halide-comprising precursor gas, at least some of the flowing of the H2, and at least some of the flowing of the second precursor gas are repeated effective to form a layer of material comprising the metal on the substrate.
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Micro)n Technology, Inc.
Sarkar Asok K
Wells St. John P.S.
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