Atomic layer deposition method of forming an oxide...

Details Atomic layer deposition method of forming an oxide... Atomic layer deposition method of forming an oxide...

2006-06-27

2006-06-27

Ghyka, Alexander (Department: 2812)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C438S681000, C438S785000

Reexamination Certificate

active

07067438

ABSTRACT:
This invention includes atomic layer deposition methods of depositing oxide comprising layers on substrates. In one implementation, a substrate is positioned within a deposition chamber. A first species is chemisorbed to form a first species monolayer onto the substrate within the deposition chamber from a gaseous first precursor. The chemisorbed first species is contacted with a gaseous second precursor effective to react with the first species to form an oxide of a component of the first species monolayer. The contacting at least in part results from flowing O3to the deposition chamber, with the O3being at a temperature of at least 170° C. at a location where it is emitted into the deposition chamber. The chemisorbing and the contacting are successively repeated to form an oxide comprising layer on the substrate. Additional aspects and implementations are contemplated.

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