Atomic layer deposition (ALD) method and reactor for...

Details Atomic layer deposition (ALD) method and reactor for... Atomic layer deposition (ALD) method and reactor for...

2011-08-30

2011-08-30

Meeks, Timothy H (Department: 1715)

Coating processes

Coating by vapor, gas, or smoke

Reexamination Certificate

active

08007865

ABSTRACT:
One inventive aspect is related to an atomic layer deposition (ALD) method comprising:a) providing a semiconductor substrate in a reactor,b) providing a pulse of a first precursor gas into the reactor at a first temperature,c) providing a first pulse of a second precursor gas into the reactor at a second temperature, andd) providing a second pulse of the second precursor gas at a third temperature lower than the second temperature. Another inventive aspect relates to a reactor suitable to apply the method.

REFERENCES:
patent: 5420072 (1995-05-01), Fiordalice et al.
patent: 6878402 (2005-04-01), Chiang et al.
patent: 2001/0019737 (2001-09-01), Chan et al.
patent: 2001/0054769 (2001-12-01), Raaijmakers et al.
patent: 2002/0068458 (2002-06-01), Chiang et al.
patent: 2003/0017697 (2003-01-01), Choi et al.
patent: 2003/0024806 (2003-02-01), Foret
patent: 2003/0073308 (2003-04-01), Mercaldi
patent: 2003/0168750 (2003-09-01), Basceri et al.
patent: 2005/0153571 (2005-07-01), Senzaki
patent: 2009/0242520 (2009-10-01), Hirayama

Affiliated with

Also associated with

Rating

Atomic layer deposition (ALD) method and reactor for... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Atomic layer deposition (ALD) method and reactor for..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Atomic layer deposition (ALD) method and reactor for... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2787646