Atomic layer deposition

Details Atomic layer deposition Atomic layer deposition

2011-08-23

2011-08-23

Sarkar, Asok K (Department: 2891)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C257SE21675, C438S216000, C438S287000, C438S591000

Reexamination Certificate

active

08003548

ABSTRACT:
A method for forming an atomic deposition layer is provided, which includes: (a) performing a first water pulse on a substrate; (b) performing a precursor pulse on the hydroxylated substrate, wherein the precursor reacts with the hydroxyl groups and forms a layer; (c) purging the substrate with an inert carrier gas; (d) exposing the layer to a second water pulse for at least about 3 seconds so that the layer has a minimum of 70 percent of surface hydroxyl groups thereon; (e) purging the layer with the inert carrier gas; and (f) repeating steps (b) to (e) to form a resultant atomic deposition layer.

REFERENCES:
patent: 6723581 (2004-04-01), Chabal et al.
patent: 6764927 (2004-07-01), Yao et al.
patent: 6818517 (2004-11-01), Maes

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