Atomic layer deposited ZrTiO 4 films

Details Atomic layer deposited ZrTiO 4 films Atomic layer deposited ZrTiO 4 films

2007-02-27

2007-02-27

Wilczewski, M. (Department: 2822)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

C438S287000, C438S240000, C438S785000, C438S003000

Reexamination Certificate

active

10420307

ABSTRACT:
After pulsing the second purging gas, a zirconium-containing precursor is pulsed into reaction chamber220,at block430.In an embodiment, the zirconium-containing precursor is ZTB. In other embodiments, a zirconium-containing precursor includes but is not limited to ZrCl4and ZrI4. The ZTB precursor is pulsed into reaction chamber220through the gas-distribution fixture240on substrate210.Mass-flow controller258regulates the flow of the ZTB from gas source253.In an embodiment, the substrate temperature is maintained at about 200° C. The ZTB aggressively reacts at the current surface of substrate210.

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