Atomic layer deposited Zr-Sn-Ti-O films using TiI4

Details Atomic layer deposited Zr-Sn-Ti-O films using TiI4 Atomic layer deposited Zr-Sn-Ti-O films using TiI4

2005-10-25

2005-10-25

Fourson, George (Department: 2823)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C427S124000

Reexamination Certificate

active

06958302

ABSTRACT:
A dielectric film containing Zr—Sn—Ti—O formed by atomic layer deposition using a TiI4precursor and a method of fabricating such a dielectric film produce a reliable dielectric layer having an equivalent oxide thickness thinner than attainable using SiO2. Depositing titanium and oxygen onto a substrate surface by atomic layer deposition using a TiI4precursor, depositing zirconium and oxygen onto a substrate surface by atomic layer deposition, and depositing tin and oxygen onto a substrate surface by atomic layer deposition form the Zr—Sn—Ti—O dielectric layer. Dielectric films containing Zr—Sn—Ti—O formed by atomic layer deposition using TiI4are thermodynamically stable such that the Zr—Sn—Ti—O will have minimal reactions with a silicon substrate or other structures during processing.

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