Atomic layer deposited Zr-Sn-Ti-O films

Details Atomic layer deposited Zr-Sn-Ti-O films Atomic layer deposited Zr-Sn-Ti-O films

2006-09-05

2006-09-05

Thompson, Craig A. (Department: 2829)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

Reexamination Certificate

active

07101813

ABSTRACT:
A dielectric film containing atomic layer deposited Zr—Sn—Ti—O and a method of fabricating such a dielectric film produce a reliable dielectric layer having an equivalent oxide thickness thinner than attainable using SiO2. Depositing titanium and oxygen onto a substrate surface by atomic layer deposition, depositing zirconium and oxygen onto a substrate surface by atomic layer deposition, and depositing tin and oxygen onto a substrate surface by atomic layer deposition form the Zr—Sn—Ti—O dielectric layer. Dielectric films containing atomic layer deposited Zr—Sn—Ti—O are thermodynamically stable such that the Zr—Sn—Ti—O will have minimal reactions with a silicon substrate or other structures during processing.

REFERENCES:
patent: 3381114 (1968-04-01), Nakanuma
patent: 4058430 (1977-11-01), Suntola et al.
patent: 4215156 (1980-07-01), Dalal et al.
patent: 4333808 (1982-06-01), Bhattacharyya et al.
patent: 4399424 (1983-08-01), Rigby
patent: 4413022 (1983-11-01), Suntola et al.
patent: 4590042 (1986-05-01), Drage
patent: 4647947 (1987-03-01), Takeoka et al.
patent: 4725877 (1988-02-01), Brasen et al.
patent: 4767641 (1988-08-01), Kieser et al.
patent: 4920071 (1990-04-01), Thomas
patent: 4993358 (1991-02-01), Mahawili
patent: 5006192 (1991-04-01), Deguchi
patent: 5496597 (1996-03-01), Soininen et al.
patent: 5595606 (1997-01-01), Fujikawa et al.
patent: 5698022 (1997-12-01), Glassman et al.
patent: 5735960 (1998-04-01), Sandhu et al.
patent: 5795808 (1998-08-01), Park
patent: 5801105 (1998-09-01), Yano et al.
patent: 5810923 (1998-09-01), Yano et al.
patent: 5828080 (1998-10-01), Yano et al.
patent: 5840897 (1998-11-01), Kirlin et al.
patent: 5912797 (1999-06-01), Schneemeyer et al.
patent: 5916365 (1999-06-01), Sherman
patent: 5950925 (1999-09-01), Fukunaga et al.
patent: 6010969 (2000-01-01), Vaarstra
patent: 6013553 (2000-01-01), Wallace et al.
patent: 6020024 (2000-02-01), Maiti et al.
patent: 6027961 (2000-02-01), Maiti et al.
patent: 6057271 (2000-05-01), Kenjiro et al.
patent: 6059885 (2000-05-01), Ohashi et al.
patent: 6093944 (2000-07-01), VanDover
patent: 6110529 (2000-08-01), Gardiner et al.
patent: 6161500 (2000-12-01), Kopacz et al.
patent: 6171900 (2001-01-01), Sun
patent: 6203613 (2001-03-01), Gates et al.
patent: 6206972 (2001-03-01), Dunham
patent: 6211035 (2001-04-01), Moise et al.
patent: 6225168 (2001-05-01), Gardner et al.
patent: 6225237 (2001-05-01), Vaartstra
patent: 6273951 (2001-08-01), Vaartstra
patent: 6281144 (2001-08-01), Cleary et al.
patent: 6297539 (2001-10-01), Ma et al.
patent: 6302964 (2001-10-01), Umotoy et al.
patent: 6303481 (2001-10-01), Park
patent: 6313035 (2001-11-01), Sandhu et al.
patent: 6348386 (2002-02-01), Gilmer
patent: 6368398 (2002-04-01), Vaartstra
patent: 6368941 (2002-04-01), Chen et al.
patent: 6380579 (2002-04-01), Nam et al.
patent: 6387712 (2002-05-01), Yano et al.
patent: 6391769 (2002-05-01), Lee et al.
patent: 6395650 (2002-05-01), Callegari et al.
patent: 6420279 (2002-07-01), Ono et al.
patent: 6432779 (2002-08-01), Hobbs et al.
patent: 6444039 (2002-09-01), Nguyen
patent: 6445023 (2002-09-01), Vaartstra et al.
patent: 6448192 (2002-09-01), Kaushik
patent: 6451641 (2002-09-01), Halliyal et al.
patent: 6451695 (2002-09-01), Sneh
patent: 6458701 (2002-10-01), Chae et al.
patent: 6465334 (2002-10-01), Buynoski et al.
patent: 6482740 (2002-11-01), Soininen et al.
patent: 6495436 (2002-12-01), Ahn et al.
patent: 6514828 (2003-02-01), Ahn et al.
patent: 6521911 (2003-02-01), Parsons et al.
patent: 6531324 (2003-03-01), Hsu et al.
patent: 6531354 (2003-03-01), Maria et al.
patent: 6534420 (2003-03-01), Ahn et al.
patent: 6537613 (2003-03-01), Senzaki et al.
patent: 6541353 (2003-04-01), Sandhu et al.
patent: 6544875 (2003-04-01), Wilk
patent: 6602720 (2003-08-01), Hsu et al.
patent: 6660660 (2003-12-01), Haukka et al.
patent: 6673701 (2004-01-01), Marsh et al.
patent: 6677250 (2004-01-01), Carpenter et al.
patent: 6713846 (2004-03-01), Senzaki
patent: 6730575 (2004-05-01), Eldridge
patent: 2002/0024080 (2002-02-01), Derderian et al.
patent: 2002/0024108 (2002-02-01), Lucovsky et al.
patent: 2002/0025628 (2002-02-01), Derderian et al.
patent: 2002/0046705 (2002-04-01), Sandhu et al.
patent: 2002/0086507 (2002-07-01), Park et al.
patent: 2002/0089023 (2002-07-01), Yu et al.
patent: 2002/0111001 (2002-08-01), Ahn et al.
patent: 2002/0122885 (2002-09-01), Ahn
patent: 2002/0146916 (2002-10-01), Irino et al.
patent: 2002/0155688 (2002-10-01), Ahn et al.
patent: 2002/0155689 (2002-10-01), Ahn et al.
patent: 2002/0192974 (2002-12-01), Ahn et al.
patent: 2003/0017717 (2003-01-01), Ahn et al.
patent: 2003/0045082 (2003-03-01), Eldridge et al.
patent: 2003/0048666 (2003-03-01), Eldridge et al.
patent: 2003/0068848 (2003-04-01), Hsu et al.
patent: 2003/0124748 (2003-07-01), Summerfelt et al.
patent: 2003/0124791 (2003-07-01), Summerfelt et al.
patent: 2003/0157764 (2003-08-01), Ahn et al.
patent: 2003/0175411 (2003-09-01), Kodas et al.
patent: 2003/0181060 (2003-09-01), Asai et al.
patent: 2003/0205742 (2003-11-01), Hsu et al.
patent: 2003/0207032 (2003-11-01), Ahn et al.
patent: 2003/0207540 (2003-11-01), Ahn et al.
patent: 2003/0207564 (2003-11-01), Ahn et al.
patent: 2003/0207593 (2003-11-01), Derderian
patent: 2003/0222300 (2003-12-01), Basceri et al.
patent: 2003/0227033 (2003-12-01), Ahn et al.
patent: 2003/0228747 (2003-12-01), Ahn et al.
patent: 2004/0004245 (2004-01-01), Forbes et al.
patent: 2004/0004247 (2004-01-01), Forbes et al.
patent: 2004/0004859 (2004-01-01), Forbes et al.
patent: 2004/0009678 (2004-01-01), Asai et al.
patent: 2004/0013009 (2004-01-01), Tsunoda et al.
patent: 2004/0033681 (2004-02-01), Ahn et al.
patent: 2004/0033701 (2004-02-01), Ahn et al.
patent: 2004/0065255 (2004-04-01), Yang et al.
patent: 2004/0104439 (2004-06-01), Haukka et al.
patent: 2004/0106249 (2004-06-01), Huotari
patent: 2001-332546 (2001-11-01), None
patent: WO-02/31875 (2002-04-01), None
patent: WO-02/43115 (2002-05-01), None
Van Dover et al, Discovery of a useful thin-film dielectric using a composition-spread approach, Mar. 12, 1998, Macmillian Publishers vol. 392, pp. 162-164.
Van Dover et al, Deposition of Uniform Zr-Sn- Ti-O films by an-axis reactive Sputtering, Sep. 1998, IEEE, vol. 19 No. 9, pp. 329-331.
Chang, Hyo S., et al., “Excellent thermal stability of AI2O3/ZrO2/AI2O3 stack structure of metal-oxide-semiconductor gate dielectrics application”,Applied Physics Letters,80(18), (May 6, 2002),3385-7.
Chen, P. J., et al., “Thermal stability ans scalability of Zr-aluminate-based high-k gate stacks”,Symposium on VLSI Technology Digest,(2002), 192-3.
Colombo, D. , et al., “Anhydrous Metal Nitrates as Volatile Single Source Precursors for the CVD of Metal Oxide Films”,Communications, Department of EE, U of M, Mpls, MN,(Jul. 7, 1998),3 pages.
Da Rosa, E B., et al., “Annealing of ZrAl/sub x/O/sub y/ ultrathin films on Si in a vacuum or in O/sub 2/”,Journal of the Electrochemical Society,148 (12), (Dec. 2001),G695-G703.
Jeon, Sanghun, et al., “Ultrathin nitrided-nanolaminate (AI2O3/ZrO2/AI2O3) for metal?oxide?semiconductor gate dielectric applications”,Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures,20(3), (May 2002), 1143-5.
Smith, Ryan C., et al., “Chemical Vapour Deposition of the Oxides of Titanium, Zirconium and Hafnium for Use as High-k Materials in Microelectronic Devices. A Carbon-free Precursor for the Synthesis of Hafnium Dioxide”,Advanced Materials for Optics and Electronics,10(3-5), (Jun. 29, 2000),105-14.
Stathis, J. H., et al., “Reliability Projection for Ultra-Thin Oxides at Low Voltage”,Tech. Dig. International Electron Device Meeting,(1998),167-9.
Aarik, Jaan , et al., “Atomic layer growth of epitaxial TiO/sub 2/ thin films from TiCI/sub 4/ and H/sub 2/O on alpha -AI/sub 2/O/sub 3/ substrates”,Journal of Crystal Growth,242(1-2), (2002), 189-198.
Aarik, Jaan , et al., “Phase trans

Affiliated with

Also associated with

Rating

Atomic layer deposited Zr-Sn-Ti-O films does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Atomic layer deposited Zr-Sn-Ti-O films, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Atomic layer deposited Zr-Sn-Ti-O films will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3598411