Atomic layer deposited tantalum containing adhesion layer

Details Atomic layer deposited tantalum containing adhesion layer Atomic layer deposited tantalum containing adhesion layer

2008-12-24

2009-10-13

Wilczewski, M. (Department: 2822)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S656000, C438S628000, C438S644000, C438S648000, C257SE21585

Reexamination Certificate

active

07601637

ABSTRACT:
Apparatus and methods of fabricating an atomic layer deposited tantalum containing adhesion layer within at least one dielectric material in the formation of a metal, wherein the atomic layer deposition tantalum containing adhesion layer is sufficiently thin to minimize contact resistance and maximize the total cross-sectional area of metal, including but not limited to tungsten, within the contact.

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