Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Making electrical device
Patent
1998-10-20
2000-09-05
Duda, Kathleen
Radiation imagery chemistry: process, composition, or product th
Imaging affecting physical property of radiation sensitive...
Making electrical device
430396, G03F 720
Patent
active
061140961
ABSTRACT:
A photo mask and a method for using the photo mask to make asymmetric resist patterns are provided. A wafer having a resist coating thereon is exposed using the mask of the invention under specially controlled defocus conditions to provide the asymmetric resist pattern profile. The mask which comprises phase shifter means on one or both sides of a light shielding pattern forming material on the mask provides light passing through the mask having a different phase on each side of the light shielding material which produces an asymmetric resist pattern profile.
REFERENCES:
patent: 5225035 (1993-07-01), Rolfson
patent: 5300379 (1994-04-01), Dao et al.
patent: 5300786 (1994-04-01), Brunner
patent: 5302477 (1994-04-01), Dao et al.
patent: 5308722 (1994-05-01), Nistler
patent: 5328784 (1994-07-01), Fukuda
patent: 5348826 (1994-09-01), Dao et al.
patent: 5368963 (1994-11-01), Hanyu et al.
patent: 5370975 (1994-12-01), Nakatani
patent: 5487962 (1996-01-01), Rolfson
patent: 5538815 (1996-07-01), Oi et al.
patent: 5547789 (1996-08-01), Nakatani et al.
patent: 5672450 (1997-09-01), Rolfson
patent: 5718829 (1998-02-01), Pierrat
New Focus Metrology Technique Special Test Mask, Timothy A. Brunner, IBM Semiconductor Research and Development Center, Hopewell Junction, New York, 1994.
Simulations and Experiments with the Phase Shift Focus Monitor, T. A. Brunner & R. D. Mih, IBM Advanced Semiconductor Technology Center, Hopewell Junction, New York, 12533, Feb., 1996.
Brunner Timothy Allan
Mih Rebecca Dora
Wheeler Donald Coughlin
Duda Kathleen
International Business Machines - Corporation
Tomaszewski John J.
Townsend Tiffany L.
LandOfFree
Asymmetrical resist sidewall does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Asymmetrical resist sidewall, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Asymmetrical resist sidewall will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2210738