Asymmetric hetero-doped high-voltage MOSFET (AH 2 MOS)

Details Asymmetric hetero-doped high-voltage MOSFET (AH 2 MOS) Asymmetric hetero-doped high-voltage MOSFET (AH 2 MOS)

2006-10-24

2006-10-24

Pizarro, Marcos D. (Department: 2814)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S531000, C257SE21417

Reexamination Certificate

active

07125777

ABSTRACT:
An asymmetric hetero-doped metal oxide (AH2MOS) semiconductor device includes a substrate and an insulated gate on the top of the substrate disposed between a source region and a drain region. On one side of the gate, heterodoped tub and source regions are formed. The tub region has dopants of a second polarity. A source region is disposed inside each tub region and has dopants of a first polarity opposite to the second polarity. On the other side of the gate, heterodoped buffer and drift regions are formed. The buffer regions comprise dopants of the second polarity. The drift regions are disposed inside the buffer regions and are doped with dopants of the first polarity. A drain n+ tap region is disposed in the drift region.

REFERENCES:
patent: 5264719 (1993-11-01), Beasom
patent: 5304827 (1994-04-01), Malhi et al.
patent: 6127696 (2000-10-01), Sery et al.
patent: 6240267 (2001-05-01), Compera
patent: 6297108 (2001-10-01), Chu
patent: 6372586 (2002-04-01), Efland et al.
patent: 6734496 (2004-05-01), Fujihira

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