Asymmetric field effect transistor

Details Asymmetric field effect transistor Asymmetric field effect transistor

2006-12-05

2006-12-05

Jackson, Jerome (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S368000, C257S344000, C257S335000, C257S336000, C257SE29279, C257SE21427, C438S286000, C438S249000

Reexamination Certificate

active

07145196

ABSTRACT:
A field effect transistor includes a channel region under a gate stack formed on a semiconductor structure. The field effect transistor also includes a drain region formed with a first dopant doping a first side of the channel region, and includes a source region formed with the first dopant doping a second side of the channel region. The drain and source regions are doped asymmetrically such that a first charge carrier profile between the channel and drain regions has a steeper slope than a second charge carrier profile between the channel and source regions.

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