Asymmetric epitaxy and application thereof

Details Asymmetric epitaxy and application thereof Asymmetric epitaxy and application thereof

2011-08-02

2011-08-02

Booth, Richard A. (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S302000, C257SE21190

Reexamination Certificate

active

07989297

ABSTRACT:
The present invention provides a method of forming asymmetric field-effect-transistors. The method includes forming a gate structure on top of a semiconductor substrate, the gate structure including a gate stack and spacers adjacent to sidewalls of the gate stack, and having a first side and a second side opposite to the first side; performing angled ion-implantation from the first side of the gate structure in the substrate, thereby forming an ion-implanted region adjacent to the first side, wherein the gate structure prevents the angled ion-implantation from reaching the substrate adjacent to the second side of the gate structure; and performing epitaxial growth on the substrate at the first and second sides of the gate structure. As a result, epitaxial growth on the ion-implanted region is much slower than a region experiencing no ion-implantation. A source region formed to the second side of the gate structure by the epitaxial growth has a height higher than a drain region formed to the first side of the gate structure by the epitaxial growth. A semiconductor structure formed thereby is also provided.

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