Asymmetric channel transistor and method for making same

Details Asymmetric channel transistor and method for making same Asymmetric channel transistor and method for making same

1997-08-08

1999-09-28

Bowers, Charles

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

H01L 21336

Patent

active

059602910

ABSTRACT:
A method for forming an asymmetrical channel transistor is disclosed. The method, in one embodiment, comprises the steps of: forming a gate stack on the surface of the substrate; forming a mask layer over the surface of the substrate and a portion of the gate stack, the mask layer having an opening over a portion of the gate stack on a first side of the gate stack; and implanting an impurity into the substrate at an angle relative to a line normal to the surface of the substrate in a range of about 5.degree. to 40.degree..

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Odanaka, et al., "Potential Design and Transport Property of 0.1-.mu.m MOSFET with Asymmetric Channel Profile," IEEE Transactions on Electron Devices, vol. 44, No. 4 (Apr. 1997).

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