Asymmetric-area memory cell

Details Asymmetric-area memory cell Asymmetric-area memory cell

2005-09-27

2005-09-27

Nhu, David (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S238000, C438S381000

Reexamination Certificate

active

06949435

ABSTRACT:
An asymmetric-area memory cell, and a fabrication method for forming an asymmetric-area memory cell, are provided. The method includes: forming a bottom electrode having an area; forming a CMR memory film overlying the bottom electrode, having an asymmetric area; and, forming a top electrode having an area, less than the bottom electrode area, overlying the CMR film. In one aspect, the CMR film has a first area adjacent the top electrode and a second area, greater than the first area, adjacent the bottom electrode. Typically, the CMR film first area is approximately equal to the top electrode area, although the CMR film second area may be less than the bottom electrode area.

REFERENCES:
patent: 5835003 (1998-11-01), Nickel et al.
patent: 6353317 (2002-03-01), Green et al.
patent: 6480411 (2002-11-01), Koganei
patent: 6707122 (2004-03-01), Hines et al.
S. Q. Liu, N. J. Wu, and A. Ignatiev, Electrical-pulse-induced reversible resistance change effect in magnetoresistive films APL. vol. 76, #19, p. 2749.

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