Ashing process of a resist layer formed on a substrate under fab

Details Ashing process of a resist layer formed on a substrate under fab Ashing process of a resist layer formed on a substrate under fab

1988-08-19

1989-08-29

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

134 1, 134 26, 156646, 156651, 156655, 156668, 20419235, B44C 122, C03C 1500, C03C 2506, B29C 3700

Patent

active

048614246

ABSTRACT:
A method for removing a resist layer, in which high doses of ions have been implanted, by etching in a first step and a second step performed sequentially. In the first step, a carbonized region produced in the resist layer due to the high dose ion implantation is etched by applying plasma using hydrogen as a reactive gas at a temperature lower than a softening point of the resist layer. In the second step, a lower region, left after firstly etching the upper region, of the resist layer is etched by a conventional method such as a downstream ashing method or a wet stripping method.

REFERENCES:
patent: 4341594 (1982-07-01), Carlson et al.
patent: 4690728 (1987-09-01), Tsang et al.
patent: 4789427 (1988-12-01), Fujimura et al.

Affiliated with

Also associated with

Rating

Ashing process of a resist layer formed on a substrate under fab does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Ashing process of a resist layer formed on a substrate under fab, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Ashing process of a resist layer formed on a substrate under fab will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2236000