Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step
Patent
1990-05-18
1991-10-15
Powell, William A.
Adhesive bonding and miscellaneous chemical manufacture
Delaminating processes adapted for specified product
Delaminating in preparation for post processing recycling step
156646, 156655, 156668, 156651, 20419236, 134 1, 252 791, B44C 122, C03C 1500, C03C 2506, B29C 3700
Patent
active
050571877
ABSTRACT:
Plasma ashing methods, for moving a resist material formed on a ground layer of a semiconductor device during fabrication of said semiconductor, are performed by using one of three kinds of reactant gases each composed of three different gases. Plasma ashing is performed: at an ashing rate of 0.5 .mu.m/min at 160.degree. C. and with an activation energy of 0.4 eV when a reactant gas composed of oxygen, water vapor and nitrogen is used; at an ashing rate of 0.5 .mu.m/min at 140.degree. C., with an activation energy of 0.38 eV and without etching the ground layer when a reactant gas composed of oxygen, water vapor and tetrafluoromethane is used; and at an ashing rate of 0.5 .mu.m/min at 140.degree. C., with an activation energy of 0.4 eV when a reactant gas composed of oxygen, hydrogen and nitrogen is used.
REFERENCES:
patent: 4673456 (1987-06-01), Spencer et al.
patent: 4689112 (1987-08-01), Bersin
Fujimura Shuzo
Hikazutani Ken-ichi
Shinagawa Keisuke
Fujitsu Ltd.
Powell William A.
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