Ashing method for removing an organic film on a substance of a s

Details Ashing method for removing an organic film on a substance of a s Ashing method for removing an organic film on a substance of a s

1989-06-05

1990-10-09

Nguyen, Nam X.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156646, 156668, H01L 21302, B44C 122

Patent

active

049618202

ABSTRACT:
Plasma ashing methods, for moving a resist material formed on a ground layer of a semiconductor device during fabrication of said semiconductor, are performed by using one of three kinds of reactant gases each composed of three different gases. Plasma ashing is performed: at an ashing rate of 0.5 .mu.m/min at 160.degree. C. and with an activation energy of 0.4 eV when a reactant gas composed of oxygen, water vapor and nitrogen is used; at an ashing rate of 0.5 .mu.m/min at 140.degree. C., with an activation energy of 0.38 eV and without etching the ground layer when a reactant gas composed of oxygen, water vapor and tetrafluoromethane is used; and at an ashing rate of 0.5 .mu.m/min at 140.degree. C., with an activation energy of 0.4 eV when a reactant gas composed of oxygen, hydrogen and nitrogen is used.

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Krogh Ole et al., "Spectroscopic Diagnostics of Photoresist Erosion in an Aluminum Etch Plasma," Journal of the Electrochemical Society, vol. 134, No. 8 (Aug. 1987), pp. 2045-2048.

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