Article comprising gated field emission structures with...

Details Article comprising gated field emission structures with... Article comprising gated field emission structures with...

2005-03-08

2005-03-08

Fourson, George (Department: 2823)

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Diffusing a dopant

C313S310000

Reexamination Certificate

active

06864162

ABSTRACT:
This invention provides novel methods of fabricating novel gated field emission structures that include aligned nanowire electron emitters (individually or in small groups) localized in central regions within gate apertures. It also provides novel devices using nanoscale emitters for microwave amplifiers, electron-beam lithography, field emission displays and x-ray sources. The new emission structures are particularly useful in the new devices.

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patent: 6673392 (2004-01-01), Lee et al.
patent: 6741019 (2004-05-01), Filas et al.

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