Article comprising an oxide layer on a GaAs-based...

Details Article comprising an oxide layer on a GaAs-based... Article comprising an oxide layer on a GaAs-based...

2005-07-05

2005-07-05

Nelms, David (Department: 2818)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Multiple layers

C438S771000, C438S788000

Reexamination Certificate

active

06914012

ABSTRACT:
A compound semiconductor structure is provided, which includes a GaAs-based supporting semiconductor structure having a surface on which a dielectric material is to be formed. A first layer of gallium oxide is located on the surface of the supporting semiconductor structure to form an interface therewith. A second layer of a Ga—Gd oxide is disposed on the first layer. The GaAs-based supporting semiconductor structure may be a GaAs-based heterostructure such as an at least partially completed semiconductor device (e.g., a metal-oxide field effect transistor, a heterojunction bipolar transistor, or a semiconductor laser). In this manner a dielectric layer structure is provided which has both a low defect density at the oxide-GaAs interface and a low oxide leakage current density because the dielectric structure is formed from a layer of Ga2O3followed by a layer of Ga—Gd-oxide. The Ga2O3layer is used to form a high quality interface with the GaAs-based supporting semiconductor structure while the Ga—Gd-oxide provides a low oxide leakage current density.

REFERENCES:
patent: 5550089 (1996-08-01), Dutta et al.
patent: 6159834 (2000-12-01), Yu et al.
patent: 6271069 (2001-08-01), Chen et al.

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