Article comprising a gallium layer on a GaAs-based semiconductor

Details Article comprising a gallium layer on a GaAs-based semiconductor Article comprising a gallium layer on a GaAs-based semiconductor

1995-03-22

1998-10-13

Bowers, Jr., Charles L.

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

By reaction with substrate

438779, H01L 21316

Patent

active

058211713

ABSTRACT:
A high quality interface between a GaAs-based semiconductor and a Ga.sub.2 O.sub.3 dielectric an be formed if the semiconductor surface is caused to have less than 1% of a monolayer impurity coverage at completion of the first monolayer of the Ga.sub.2 O.sub.3 on the surface. This is achieved, for instance, by preparing the surface of a GaAs wafer under UHV conditions in a first growth chamber, transferring the wafer through a transfer module under UHV to a second growth chamber that is also under UHV, and growing the dielectric by evaporation of Ga.sub.2 O.sub.3 from a solid source, the process carried out such that the integrated impurity exposure of the surface is at most 100 Langmuirs. Articles according to the invention have low interface state density (<10.sup.11 /cm.sup.2 .multidot.eV) and interface recombination velocity (<10.sup.4 cm/s). Semiconductor/Ga.sub.2 O.sub.3 structures according to the invention can be used advantageously in a variety of electronic or optoelectronic devices, e.g., GaAs-based MOS-FETs, HBTs, lasers on solar cells.

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