Article comprising a gallium layer on a GaAs-based semiconductor

Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – By reaction with substrate

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438779, H01L 21316

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058211713

ABSTRACT:
A high quality interface between a GaAs-based semiconductor and a Ga.sub.2 O.sub.3 dielectric an be formed if the semiconductor surface is caused to have less than 1% of a monolayer impurity coverage at completion of the first monolayer of the Ga.sub.2 O.sub.3 on the surface. This is achieved, for instance, by preparing the surface of a GaAs wafer under UHV conditions in a first growth chamber, transferring the wafer through a transfer module under UHV to a second growth chamber that is also under UHV, and growing the dielectric by evaporation of Ga.sub.2 O.sub.3 from a solid source, the process carried out such that the integrated impurity exposure of the surface is at most 100 Langmuirs. Articles according to the invention have low interface state density (<10.sup.11 /cm.sup.2 .multidot.eV) and interface recombination velocity (<10.sup.4 cm/s). Semiconductor/Ga.sub.2 O.sub.3 structures according to the invention can be used advantageously in a variety of electronic or optoelectronic devices, e.g., GaAs-based MOS-FETs, HBTs, lasers on solar cells.

REFERENCES:
patent: 4001858 (1977-01-01), Ballamy et al.
patent: 4859253 (1989-08-01), Buchanan et al.
patent: 4994140 (1991-02-01), Ksuzo et al.
patent: 5186718 (1993-02-01), Tepman et al.
patent: 5451548 (1995-09-01), Hunt et al.
patent: 5550084 (1996-08-01), Dutta et al.
"Investigation of the Mechanism for Schottky Barrier Formation by Group III Metal on GaAs(110)", by P. Skeath et al., J. Vac. Science and Technology, vol. 16(5), Sep./Oct. 1979, pp. 1143-1148, 1979.
"Oxide Layers on GaAs Prepared by Thermal, Anodic and Plasma Oxidation: In-depth Profiles and Annealing Effects", by K. Watanabe et al., Thin Solid Films, 56(1-2), pp. 63-73, 1979.
"Determination of the Oxygen Binding Site on GaAs (110) Using Soft-X-Ray-Photoemission Spectroscopy", by P. Pianetta et al., Physical Review Letters, vol. 35 (20), 17 Nov. 1975, pp. 1356-1359, 1975.
"Unified Defect Model and Beyond", by W.E. Spicer et al., J. Vac. Science and Technology, vol. 17(5), Sep./Oct. 1980, pp. 1019-1027.
"Determination of the Oxygen Binding Site on GaAs(110) Using Soft-X-Ray-Photoemission Spectroscopy", by P. Pianetta et al., Physical Review Letters, vol. 35 (20), 17 Nov. 1975, pp. 1356-1359.
"In-Situ Process for AlGaAs Compound Semiconductor: Materials Science and Device Fabrication", by M. Hong et al., Journal of Electronic Materials, vol. 23, No. 7, 1984, pp. 625-634.
"In Situ Fabricated Ga.sub.2 O.sub.3 -GaAs Structures with Low Interface Recombination Velocity", by M. Passlack et al., Applied Physics Letters, vol. 66 (5), 30 Jan. 1995, pp. 625-627.
"Ga.sub.2 O.sub.3 Films for Electronic and Optoelectronic Applications", by M. Passlack et al., J. Appl. Phys., vol. 77, No. 2, 15 Jan. 1995, pp. 686-693.
"Ammonia Plasma Passivation of GaAs in Downstream Microwave and Radio-Frequency Parallel Plate Plasma Reactors", by E. S. Aydil, J. Vac. Science Technol. B, vol. 11 (2), Mar./Apr. 1993, pp. 195-205.
"Physics of Semiconductor Devices", by S. M. Sze,John Wiley & Sons, 1981, New York, pp. 366-369.

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