Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1997-11-26
1999-08-03
Whitehead, Jr., Carl
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257333, 257545, 257386, 257388, 257532, 257533, 257906, H01L 27148
Patent
active
059329050
ABSTRACT:
Ba--Sr--Ti-oxide dielectric material, with at least 60 atomic percent of the total content of the oxide being Ti, can have relatively high dielectric constant K (>40 at 20.degree. C.) and relatively low second order voltage coefficient a.sub.2 of the dielectric constant (a.sub.2 <100 PPM V.sup.2 at 20.degree. C.). In preferred embodiments the dielectric material has nominal composition (BA.sub.x Sr.sub.y Ti.sub.1--x--y)-oxide, with 1--x--y in the range 0.65-0.90, with both x and y greater than or equal to 0.05. Ba, Sr and Ti together typically comprise at least 99 atomic percent of the total metal content of the dielectric material.
REFERENCES:
patent: 5635420 (1997-06-01), Nishioka
patent: 5645634 (1997-07-01), Ogi et al.
"MOCVD BaSrTiO.sub.3 for .gtoreq. 1-Gbit DRAMS", by S. M. Bilodeau et al., Solid State Technology, Jul. 1997, pp. 235-242.
"Growth and Characterization of Thin Film Dielectrics For Microwave Applications", by H. M. O'Bryan et al., Integrated Ferroelectrics,, vol. 15, pp. 155-162.
"Synthesis and Characterization of Alkaline-Earth-Metal .beta.-Diketonate Complexes Used as Precursors for Chemical Vapor Deposition of Thin-Film Superconductors", by S. B. Turnipseed et al., Inorganic Chemistry, vol. 30, No. 6, 1991, pp. 1164-1170.
"MOCVD of BaSrTiO.sub.3 for ULSI DRAMS", by P. Kirlin et al., Integrated Ferroelectrics, vol. 7, pp. 307-318.
O'Bryan, Jr. Henry Miles
Roeder Jeffrey Frederick
Stauf Gregory T.
Watts Roderick Kent
Advanced Technology & Materials Inc.
Jr. Carl Whitehead
Lucent Technologies - Inc.
Pacher Eugen E.
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