Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1993-12-09
1995-03-14
Jackson, Jerome
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257390, 257397, 257510, H01L 2968, H01L 2978, H01L 2712
Patent
active
053979087
ABSTRACT:
A semiconductor processing device isolation method includes: a) providing non-LOCOS insulating device isolation blocks by trench and refill technique on a substrate to define recessed moat volume therebetween; b) providing gate dielectric within the moat volume; c) providing a layer of electrically conductive material over the substrate and gate dielectric to a thickness sufficient to completely fill the moat volume between adjacent isolation blocks; d) chemical-mechanical polishing the layer of electrically conductive material to provide a planarized upper electrically conductive material surface; e) photopatterning and etching the layer of electrically conductive material to provide an electrically conductive runner which overlies a plurality of the isolation blocks and to selectively remove the electrically conductive material from within selected regions of moat volume to define field effect transistor gates within the moat volume; and f) providing conductivity enhancing impurity through the selected regions of moat volume into the substrate to define source/drain regions adjacent the field effect transistor gates. The invention also includes an array of memory integrated circuitry.
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patent: 5112772 (1992-05-01), Wilson et al.
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patent: 5196914 (1993-03-01), Mazzali
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patent: 5250456 (1993-10-01), Bryant
Dennison Charles H.
Doan Trung T.
Jackson Jerome
Micro)n Technology, Inc.
Monin, Jr. Donald L.
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