Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2009-10-20
2011-12-06
Parker, Kenneth (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S059000, C257S072000
Reexamination Certificate
active
08072034
ABSTRACT:
According to an embodiment of the invention, an array substrate includes a first test line, a second test line, a first source line group, a second source line group, a plurality of gate lines and a switching device. The first test line extends along a first direction. The second test line is substantially in parallel with the first test line. The first source line group that extends along a second direction that is substantially perpendicular to the first direction, and electrically connected to the first test line. The second source line group extends along the second direction and is electrically connected to the second test line. Each of the gate lines extends along the first direction. The switching device is formed on a region surrounded by the first source line, the second source line and the gate lines. Therefore, defects induced by static electricity generated during manufacturing process are reduced.
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patent: 6246074 (2001-06-01), Kim et al.
patent: 6590624 (2003-07-01), Lee
patent: 6734925 (2004-05-01), Lee et al.
patent: 6784862 (2004-08-01), Kodate et al.
patent: 7268838 (2007-09-01), Lim
patent: 7379126 (2008-05-01), Kim et al.
patent: 2002-277896 (2002-09-01), None
patent: 1999-0047650 (1999-07-01), None
English Abstract, Publication No. JP 2002-277896.
Ho Anthony
Innovation Counsel LLP
Parker Kenneth
Samsung Electronics Co,. Ltd.
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