Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-03-13
2007-03-13
Wojciechowicz, Edward (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S341000, C257S401000, C257S390000
Reexamination Certificate
active
10624506
ABSTRACT:
A pull-up transistor array for a high voltage output circuit is provided. The transistor array includes a semiconductor substrate, an epitaxial layer formed on the semiconductor substrate and N double diffused MOS transistors (DMOS transistors) laterally arranged on the epitaxial layer. One of source/drains of the DMOS transistors is formed at each of transistors, and the N DMOS transistors share another source/drain. Accordingly, the pull-up transistor array may output a signal of a high voltage and high current, and may high-integrate a device because a device isolation region is not required between the DMOS transistors.
REFERENCES:
patent: 5126911 (1992-06-01), Contiero et al.
patent: 5485027 (1996-01-01), Williams et al.
patent: 6331794 (2001-12-01), Blanchard
Byeon Jae-Il
Shon Il-Hun
Samsung Electronics Co,. Ltd.
Volentine & Whitt P.L.L.C.
Wojciechowicz Edward
LandOfFree
Array of pull-up transistors for high voltage output circuit does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Array of pull-up transistors for high voltage output circuit, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Array of pull-up transistors for high voltage output circuit will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3769775