Static information storage and retrieval – Read/write circuit – Bad bit
Reexamination Certificate
2006-04-25
2006-04-25
Dinh, Son T. (Department: 2824)
Static information storage and retrieval
Read/write circuit
Bad bit
C365S185200, C365S185220, C365S185290, C365S210130, C365S230030
Reexamination Certificate
active
07035151
ABSTRACT:
Memory array architectures and operating methods suitable for super high density in the giga bits for multilevel nonvolatile memory integrated circuit system. The array architectures and operating methods include: (1) an Inhibit and Select Segmentation Scheme; (2) a Multilevel Memory Decoding Scheme that includes a Power Supply Decoded Decoding Scheme, a Feedthrough-to-Memory Decoding Scheme, a Feedthrough-to-Driver Decoding Scheme, and a Winner-Take-All Kelvin Memory Decoding Scheme; (3) a constant-total-current-program scheme; (4) includes fast-slow and 2-step ramp rate control programming; and a reference system method and apparatus, which includes a Positional Linear Reference System, a Positional Geometric Reference System, and a Geometric Compensation Reference System. The apparatus and method enable multilevel programming, reading, and margining.
REFERENCES:
patent: 5083294 (1992-01-01), Okajima
patent: 5450360 (1995-09-01), Sato
patent: 5914907 (1999-06-01), Kobayashi et al.
patent: 5930169 (1999-07-01), Iwata et al.
Khan Sakhawat M.
Korsh George J.
Tran Hieu Van
Dinh Son T.
DLA Piper Rudnick Gray Cary US LLP
Silicon Storage Technology, Inc.
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