X-ray or gamma ray systems or devices – Specific application – Lithography
Patent
1987-07-15
1989-08-08
Fields, Carolyn E.
X-ray or gamma ray systems or devices
Specific application
Lithography
2504921, 2504922, G21K 510
Patent
active
048560375
ABSTRACT:
An arrangement or apparatus for exposing semiconductor wafers by means of a synchrotron radiation, wherein a mask and semiconductor wafer are movable in a common, perpendicular direction relative to the direction of the X-ray beam in order to sweep an exposure field. The optical devices are provided for observing adjustment marks on the mask and semiconductor wafer to create control signals for the adjustment of the mask and wafer relative to each other. The beam radiation is conducted in a tube having a rectangular slot-shaped radiation window, which is arranged immediately adjacent to the mask and the optical devices are provided next to the beam feed tube and aligned to a part of the exposure fields lying outside of the impingement area of the beam leaving the radiation window.
REFERENCES:
patent: 4238780 (1980-12-01), Doemens
patent: 4253112 (1981-02-01), Doemens
Muller "Overlay Measurements for X-ray Lithography" J. Vac. Sci. Technol. B., vol. 3, No. 1, Jan./Feb. 1985, pp. 2141-244.
Folchi et al "X-ray Lithography Mask Alignment Stage", IBM Techn. Discl. Bull. vol. 25, No. 12, May 1983, pp. 6400-6401.
Betz Hans
Krenner Johann
Mueller Karl-Heinz
Vach Wilhelm
Fields Carolyn E.
Frauenhofer Gesellschaft
Karl Suess KG GmbH & Co.
Porta David P.
Siemens Aktiengesellschaft
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