Argon amorphizing polysilicon layer fabrication

Details Argon amorphizing polysilicon layer fabrication Argon amorphizing polysilicon layer fabrication

1996-04-16

1998-10-13

Chapman, Mark

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Ion implantation of dopant into semiconductor region

438517, 438798, 438799, 427523, 427387, H01L 21265

Patent

active

058211578

ABSTRACT:
A polycrystalline silicon (polysilicon) layer is fabricated by forming a polysilicon layer on a substrate, implanting argon into the polysilicon layer to selectively amorphize the polysilicon layer and recrystallizing the selectively amorphized polysilicon layer. The argon dosage and energy may be controlled so that the argon passes through the polysilicon layer into the substrate so that argon ions do not disturb recrystallization. By using argon amorphizing, excessive heating of the substrate during implantation is prevented and ion implanter contamination from conventional silicon implantation is prevented.

REFERENCES:
patent: 5436175 (1995-07-01), Nakato et al.
patent: 5580815 (1996-12-01), Hsu et al.

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