Area-efficient stack capacitor

Details Area-efficient stack capacitor Area-efficient stack capacitor

2005-01-04

2005-01-04

Quach, T. N. (Department: 2814)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S255000, C438S398000

Reexamination Certificate

active

06838339

ABSTRACT:
An area-efficient stack capacitor for use in an integrated circuit comprises, in one embodiment, a layer of elemental platinum (Pt) as a bottom electrode, a layer of hemispherical grained poly Si on top of the Pt bottom electrode, a second layer of Pt deposited over the layer of hemispherical grained poly Si, a layer of dielectric deposited over the second layer of Pt, and a third layer of Pt deposited over the dielectric layer, where the third layer of Pt acts as upper electrode.

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