Area efficient differential EEPROM cell with improved data...

Details Area efficient differential EEPROM cell with improved data... Area efficient differential EEPROM cell with improved data...

2005-05-18

2008-11-25

Hoang, Huan (Department: 2827)

Static information storage and retrieval

Read/write circuit

Particular read circuit

C365S156000

Reexamination Certificate

active

07457173

ABSTRACT:
An electrically erasable programmable read only memory (EEPROM) (500) is disclosed having improved data retention and read/write endurance. The EEPROM also lacks a more conventional cross coupling arrangement and thus is more area efficient than conventional EEPROM cells. The EEPROM (500) includes a PMOS transistor portion (514a) and an NMOS transistor portion (514b), where respective currents of these devices are compared to one another (e.g., subtracted) to give a differential reading that provides for the state of the EEPROM (500).

REFERENCES:
patent: 5018102 (1991-05-01), Houston
patent: 5412599 (1995-05-01), Daniele et al.
patent: 5566110 (1996-10-01), Soenen et al.
patent: 6590798 (2003-07-01), Komatsuzaki
patent: 6841447 (2005-01-01), Logie et al.

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