Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Patent
1998-09-21
1999-12-21
Saadat, Mahshid
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
257773, 257763, 257764, H01L 310232, H01L 2348, H01L 2352, H01L 2940
Patent
active
060052775
ABSTRACT:
A method for forming an anti-reflective-coating(ARC) layer is described. This ARC layer performs not only in its capacity to reduce reflections from its subjacent metal layer during the metal patterning photoresist exposure, but also serves as an effective etch inhibitor during subsequent via etching. Of particular importance is the ability provided by this ARC layer to sustain its etch resistance during considerable over etching such as is required when vias of different depths are to be opened. The ARC layer differs from the conventional titanium nitride ARC layer in that it has a base layer of titanium below the titanium nitride portion. It is this titanium layer and an optional intermediate Ti rich layer that sustains the over etch. Additionally, the titanium forms an improved bonding with the metal beneath providing reduced via contact resistance and greater via stability and consistency.
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Liu Chung-Chieh
Liu Chwen-Ming
Wang Jiann-Jong
Ackerman Stephen B.
Fenty Jesse A.
Saadat Mahshid
Saile George O.
Taiwan Semiconductor Manufacturing Company , Ltd.
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