Aqueous dispersion for CMP, polishing method and method for...

Details Aqueous dispersion for CMP, polishing method and method for... Aqueous dispersion for CMP, polishing method and method for...

2006-11-17

2010-11-16

Ahmed, Shamim (Department: 1713)

Etching a substrate: processes

Nongaseous phase etching of substrate

Using film of etchant between a stationary surface and a...

C216S088000, C438S692000, C252S079100

Reexamination Certificate

active

07833431

ABSTRACT:
An aqueous dispersion for chemical mechanical polishing is provided, which includes water and a resin particle. The resin particles accompany with a projection having a curvature radius ranging from 10 nm to 1.65 μm on a surface. The maximum length of the resin particles is not more than 5 μm and is 2.5 to 25 times as large as the curvature radius.

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