Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2006-05-30
2006-05-30
Whitehead, Jr., Carl (Department: 2813)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
Reexamination Certificate
active
07052988
ABSTRACT:
A nitrogen-free anti-reflective layer for use in semiconductor photolithography is fabricated in a chemical vapor deposition process, optionally plasma-enhanced, using a gaseous mixture of carbon, silicon, and oxygen sources. By varying the process parameters, acceptable values of the refractive index n and extinction coefficient k can be obtained. The nitrogen-free anti-reflective layer produced by this technique eliminates the mushrooming and footing problems found with conventional anti-reflective layers.
REFERENCES:
patent: 6051282 (2000-04-01), Konjuh et al.
patent: 6147009 (2000-11-01), Grill et al.
patent: 6156640 (2000-12-01), Tsai et al.
patent: 6168726 (2001-01-01), Li et al.
patent: 6174816 (2001-01-01), Yin et al.
patent: 6214526 (2001-04-01), Sundararajan et al.
patent: 6235456 (2001-05-01), Ibok
patent: 6242361 (2001-06-01), Lee et al.
patent: 6251770 (2001-06-01), Uglow et al.
patent: 6316167 (2001-11-01), Angelopoulos et al.
patent: 6376392 (2002-04-01), Lee et al.
patent: 6635583 (2003-10-01), Bencher et al.
patent: 6720251 (2004-04-01), van Schravendijk et al.
patent: 2002/0155386 (2002-10-01), Xu et al.
Li et al., “Methods of Forming Moisture Barrier for Low K Film Intergration with Anti-Reflective Layers”, Novellus Systems, Inc., U.S. Appl. No. 11/168,013, filed Jun. 27, 2005, pp. 1-25.
U.S. Office Action mailed Oct. 24, 2002, from U.S. Appl. No. 09/990,197.
U.S. Office Action mailed May 21, 2003, from U.S. Appl. No. 09/990,197.
Karim M. Ziaul
Li Ming
Mountsier Tom
Schravendijk Bart van
Tian Jason
Beyer Weaver & Thomas LLP
Dolan Jennifer M
Jr. Carl Whitehead
Novellus Systems Inc.
LandOfFree
Applications and methods of making nitrogen-free... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Applications and methods of making nitrogen-free..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Applications and methods of making nitrogen-free... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3563558