Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2006-05-10
2008-12-23
Nhu, David (Department: 2895)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S680000, C438S688000, C257SE21170, C257SE21006, C257SE21007, C257SE21230, C257SE21218, C057S117000, C057S117000, C057S117000
Reexamination Certificate
active
07468321
ABSTRACT:
A new method is provided for the processing of metals, most notably copper, such that damage to exposed surfaces of these metals is prevented. During a step of semiconductor processing, which results in exposing a metal surface to a wet substance having a pH value, a voltage is applied to the metal that is exposed. The value of the applied voltage can, dependent on the value of the pH constant of the wet substance, be selected such that the exposed metal surface is protected against alkaline effects of the wet substance.
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Chen Yen-Ming
Ching Kai-Ming
Lee Hsin-Hui
Lin Chia-Fu
Lin Ta-Min
Nhu David
Taiwan Semiconductor Manufacturing Co. Ltd.
Thomas Kayden Horstemeyer & Risley
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