Application of different isolation schemes for logic and...

Details Application of different isolation schemes for logic and... Application of different isolation schemes for logic and...

2009-06-22

2011-11-29

Menz, Laura (Department: 2813)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S275000, C438S423000

Reexamination Certificate

active

08067279

ABSTRACT:
The present invention facilitates semiconductor device fabrication by providing mechanisms for utilizing different isolation schemes within embedded memory and other logic portions of a device. The isolation mechanism of the embedded memory portion is improved relative to other portions of the device by increasing dopant concentrations or reducing the depth of the dopant profiles within well regions of the embedded memory array. As a result, smaller isolation spacing can be employed thereby permitting a more compact array. The isolation mechanism of the logic portion is relatively less than that of the embedded memory portion, which permits greater operational speed for the logic.

REFERENCES:
patent: 5156990 (1992-10-01), Mitchell
patent: 5702988 (1997-12-01), Liang
patent: 5728621 (1998-03-01), Zheng et al.
patent: 5817567 (1998-10-01), Jang et al.
patent: 5858826 (1999-01-01), Lee et al.
patent: 5872043 (1999-02-01), Chen
patent: 5880007 (1999-03-01), Varian et al.
patent: 5923993 (1999-07-01), Sahota
patent: 5960276 (1999-09-01), Liaw et al.
patent: 6020226 (2000-02-01), Cerny et al.
patent: 6190979 (2001-02-01), Radens et al.
patent: 6198116 (2001-03-01), Cerny et al.
patent: 6265292 (2001-07-01), Parat et al.
patent: 6399461 (2002-06-01), Liu et al.
patent: 6486517 (2002-11-01), Park
patent: 6521493 (2003-02-01), Alsmeier et al.
patent: 6534781 (2003-03-01), Dennison
patent: 6593176 (2003-07-01), Dennison
patent: 6599804 (2003-07-01), Bulucea et al.
patent: 6600186 (2003-07-01), Lee et al.
patent: 6624022 (2003-09-01), Hurley et al.
patent: 6627937 (2003-09-01), Shinkawata
patent: 6649968 (2003-11-01), Wolstenholme
patent: 6656783 (2003-12-01), Park
patent: 6674145 (2004-01-01), Hurley et al.
patent: 6690051 (2004-02-01), Hurley et al.
patent: 6707079 (2004-03-01), Satoh et al.
patent: 6713346 (2004-03-01), Wolstenholme
patent: 6753231 (2004-06-01), Ikeda et al.
patent: 6777286 (2004-08-01), Clevenger et al.
patent: 6914287 (2005-07-01), Tran
patent: 6949445 (2005-09-01), Rhodes et al.
patent: 7029997 (2006-04-01), Wu
patent: 7045410 (2006-05-01), Mehrad et al.
patent: 7057257 (2006-06-01), Tran
patent: 7141468 (2006-11-01), Sadra et al.
patent: 7193277 (2007-03-01), Sadra et al.
patent: 7208390 (2007-04-01), Singh et al.
patent: 7314800 (2008-01-01), Sadra et al.
patent: 7514757 (2009-04-01), Liaw
patent: 7662688 (2010-02-01), Sadra et al.
patent: 2002/0155657 (2002-10-01), Ikeda et al.
patent: 2002/0180068 (2002-12-01), Clevenger et al.
patent: 2004/0152279 (2004-08-01), Madurawe
patent: 2005/0037594 (2005-02-01), Wu
patent: 2005/0087810 (2005-04-01), Sadra et al.
patent: 2005/0124102 (2005-06-01), Wang et al.
patent: 2005/0145949 (2005-07-01), Sadra et al.
patent: 2005/0266628 (2005-12-01), Wang et al.
patent: 2006/0038240 (2006-02-01), Tsutsumi et al.
patent: 2006/0084230 (2006-04-01), Sadra et al.
patent: 2007/0141794 (2007-06-01), Morris
patent: 2007/0290192 (2007-12-01), Rotondaro
patent: 2008/0003772 (2008-01-01), Sadra et al.
patent: 2008/0121942 (2008-05-01), Liaw
patent: 2008/0128756 (2008-06-01), Satoh
patent: 2009/0258471 (2009-10-01), Sadra et al.

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