Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate
Reexamination Certificate
2005-02-22
2005-02-22
Niebling, John F. (Department: 2812)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Insulative material deposited upon semiconductive substrate
C438S758000, C438S778000
Reexamination Certificate
active
06858548
ABSTRACT:
A process for depositing a low dielectric constant layer (k<3) on a flat panel display and a flat panel display. The process includes reacting one or more organosilicon compounds with an oxygen containing compound at an RF power level from about 0.345 W/cm2to about 1.265 W/cm2. The flat panel display includes a plasma display panel having a first substrate, a plurality of barriers deposited on the first substrate, a second substrate, a low dielectric constant layer (k<3) deposited on the second substrate, and a plurality of ground electrodes formed between the barriers and the dielectric layer.
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Harshbarger William R.
Shang Quanyuan
Won Tae Kyung
Applied Materials Inc.
Issac Stanetta
Moser Patterson & Sheridan LLP
Niebling John F.
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