Static information storage and retrieval – Read/write circuit – Including reference or bias voltage generator
Reexamination Certificate
2006-02-06
2008-10-07
Nguyen, Viet Q. (Department: 2827)
Static information storage and retrieval
Read/write circuit
Including reference or bias voltage generator
C365S189070, C365S226000, C327S536000, C327S538000, C323S281000
Reexamination Certificate
active
07433249
ABSTRACT:
A memory device includes an equalization voltage generator. The equalization voltage generator includes an oscillator and a charge pump to produce a first voltage, which may be used as an equalization voltage for pairs of complementary digit lines. The oscillator is controlled by an oscillator control signal, which is produced by a feedback and control loop of the equalization voltage generator. The feedback and control loop includes a reference generator circuit to produce a stable, internal reference signal that is clamped at a maximum reference voltage. A comparator of the feedback and control loop compares the internal reference signal with a second voltage, which is proportional to the first voltage. The comparator causes the oscillator to turn on when the second voltage is lower than the reference voltage, and causes the oscillator to turn off when the second voltage is higher than the reference voltage.
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Micro)n Technology, Inc.
Nguyen Viet Q.
Schwegman Lundberg & Woessner, P.A.
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