Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having growth from a solution comprising a solvent which is...
Reexamination Certificate
2002-06-06
2008-09-09
Kunemund, Robert (Department: 1792)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth from liquid or supercritical state
Having growth from a solution comprising a solvent which is...
C117S069000, C117S070000, C117S077000, C117S078000, C117S073000, C117S074000, C117S076000, C117S952000
Reexamination Certificate
active
07422633
ABSTRACT:
The present invention provides a process for forming a bulk monocrystalline gallium-containing nitride, i.e. GaN etc., on the surface of heterogeneous substrate, i.e. SiC etc., comprising the steps of forming a supercritical ammonia solvent containing ion or ions of alkali metals in an autoclave, dissolving a gallium-containing feedstock in the supercritical ammonia solvent to form a supercritical solution in which the feedstock is dissolved, and crystallizing gallium-containing nitride on the face of a seed which contains no element of oxygen and has a lattice constant of 2.8 to 3.6 with respect to ao-axis from the supercritical solution, under a condition of a higher temperature and/or a lower pressure than the temperature and/or the pressure where the gallium-containing feedstock is dissolved in the supercritical solvent. Therefore nitride gallium system compound semiconductor device can be formed on a conductive substrate.
REFERENCES:
patent: 5096860 (1992-03-01), Nadkarni
patent: 5456204 (1995-10-01), Dimitrov et al.
patent: 5589153 (1996-12-01), Garces
patent: 5679965 (1997-10-01), Schetzina
patent: 5780876 (1998-07-01), Hata
patent: 5868837 (1999-02-01), DiSalvo et al.
patent: 5928421 (1999-07-01), Yuri et al.
patent: 6031858 (2000-02-01), Hatakoshi et al.
patent: 6046464 (2000-04-01), Schetzina
patent: 6051145 (2000-04-01), Griffith et al.
patent: 6067310 (2000-05-01), Hashimoto et al.
patent: 6139628 (2000-10-01), Yuri et al.
patent: 6156581 (2000-12-01), Vaudo et al.
patent: 6172382 (2001-01-01), Nagahama
patent: 6177057 (2001-01-01), Purdy
patent: 6252261 (2001-06-01), Usui
patent: 6265322 (2001-07-01), Anselm et al.
patent: 6270569 (2001-08-01), Shibata et al.
patent: 6303403 (2001-10-01), Sato et al.
patent: 6329215 (2001-12-01), Porowski et al.
patent: 6372041 (2002-04-01), Cho et al.
patent: 6399500 (2002-06-01), Porowski et al.
patent: 6399966 (2002-06-01), Tsuda
patent: 6423984 (2002-07-01), Kato
patent: 6447604 (2002-09-01), Flynn et al.
patent: 6459712 (2002-10-01), Tanaka et al.
patent: 6468882 (2002-10-01), Motoki
patent: 6488767 (2002-12-01), Xu et al.
patent: 6509651 (2003-01-01), Matsubara
patent: 6531072 (2003-03-01), Suda et al.
patent: 6534795 (2003-03-01), Hori et al.
patent: 6586762 (2003-07-01), Kozaki
patent: 6593589 (2003-07-01), Osinski et al.
patent: 6614824 (2003-09-01), Tsuda
patent: 6677619 (2004-01-01), Nagahama et al.
patent: 6686608 (2004-02-01), Takahira
patent: 6711191 (2004-03-01), Kozaki
patent: 6720586 (2004-04-01), Kidoguchi
patent: 6858882 (2005-02-01), Tsuda
patent: 6924512 (2005-08-01), Tsuda
patent: 7053413 (2006-05-01), D'Evelyn et al.
patent: 7057211 (2006-06-01), Dwilinski et al.
patent: 7081162 (2006-07-01), Dwilinski et al.
patent: 7097707 (2006-08-01), Xu
patent: 7160388 (2007-01-01), Dwili ski et al.
patent: 7291544 (2007-11-01), D'Evelyn et al.
patent: 2001/0008656 (2001-07-01), Tischler et al.
patent: 2001/0022154 (2001-09-01), Cho et al.
patent: 2001/0030328 (2001-10-01), Ishida
patent: 2002/0014631 (2002-02-01), Iwata
patent: 2002/0031153 (2002-03-01), Niwa
patent: 2002/0047113 (2002-04-01), Ohno
patent: 2002/0063258 (2002-05-01), Motoki
patent: 2002/0078881 (2002-06-01), Cuomo
patent: 2002/0189531 (2002-12-01), Dwilinski et al.
patent: 2003/0143771 (2003-07-01), Kidoguchi et al.
patent: 2003/0209191 (2003-11-01), Purdy
patent: 2004/0031978 (2004-02-01), D'Evelyn et al.
patent: 2004/0139912 (2004-07-01), Dwilinski et al.
patent: 2004/0244680 (2004-12-01), Dwilinski et al.
patent: 2004/0255840 (2004-12-01), Dwilinski et al.
patent: 2006/0032428 (2006-02-01), Dwilinski et al.
patent: 2006/0037530 (2006-02-01), Dwilinski et al.
patent: 1036414 (1989-10-01), None
patent: 1289867 (2001-04-01), None
patent: 1065289 (2001-05-01), None
patent: 0 711 853 (1996-05-01), None
patent: 0 716 457 (1996-06-01), None
patent: 0 949 731 (1999-10-01), None
patent: 0973207 (2000-01-01), None
patent: 1088914 (2001-04-01), None
patent: 2 796 657 (2001-01-01), None
patent: 2 326 160 (1998-12-01), None
patent: 2 333 521 (1999-07-01), None
patent: 07-022692 (1995-03-01), None
patent: 7-165498 (1995-06-01), None
patent: 7-249830 (1995-09-01), None
patent: 8-250802 (1996-09-01), None
patent: 9-134878 (1997-05-01), None
patent: 09-293897 (1997-11-01), None
patent: 10-7496 (1998-01-01), None
patent: 10-70079 (1998-03-01), None
patent: 10-70338 (1998-03-01), None
patent: 10-84161 (1998-03-01), None
patent: 11-54847 (1999-02-01), None
patent: 11-307813 (1999-11-01), None
patent: 2000-82863 (2000-03-01), None
patent: 2000-82867 (2000-03-01), None
patent: 2000-216494 (2000-08-01), None
patent: 2000-327495 (2000-11-01), None
patent: 2001-85737 (2001-03-01), None
patent: 2001-342100 (2001-12-01), None
patent: 2003040699 (2003-02-01), None
patent: 2004168656 (2004-06-01), None
patent: WO 98/55671 (1998-12-01), None
patent: WO 01/24284 (2001-04-01), None
patent: WO 01/24921 (2001-04-01), None
patent: WO-02101120 (2002-12-01), None
R. Dwilinski et al., Ammono method of GaN and AIN production, May 18, 1998, pp. 1348-1350.
Hisanori Yamane, Polarity of GaN Single Crystals Prepared with Na Flux, pp. 3436-3440.
Masichi Yano et al., Control of Nucleation Site and Growth Orientation of Bulk GaN Crystals.
R. Dwilinski et al., Ammo method of BN, AIN and GaN synthesis and crystal growth, pp. 1-4.
K. Pakula et al., Growth of GaN Metalorganic Chemical Vapour Deposition Layers on GaN Single Crystals, vol. 88 (1995), pp. 861-864.
R. Dwilinski et al., On GaN Crystallization by Ammonothermal Method, vol. 90(1996, pp. 763-766.
R. Dwilinski et al., Exciton plhoto-liminescence of GaN bulk crystals grown by the Ammono method, (1997), pp. 46-49.
Douglas R. Ketchum et al., Crystal growth of gallium nitride in supercritical ammonia, (2001) pp. 431-434.
Yu Melnik et al., Properties of free-standing gan bulk crystals grown by hvpe, 1998, pp. 269-274.
C.M. Balkas et al., Growth of Bulk AIN and GaN Single Crystals by Sublimation, vol. 449 1997, pp. 41-46.
Sylwester Porowski, Bulk and homoepitaxial GaN-growth and characterisation, 1998, pp. 153-158.
Masato Aoki et al. Growth of GaN single crystals from a Na-Ga melt at 750 degreesC. and 5Mpa of N2, 2000, pp. 7-12.
D. Ketchum, et al., “Crystal growth of gallium nitride in supercritical ammonia”,Journal of Crystal Growth, vol. 222, Jul. 18, 2000.
R. Dwilinski, et al., “Ammono method of GaN and AIN production”,Diamond and Related Materials, vol. 7, May 18, 1998.
Yamane, Hisanori et al. (1998) “Morphology and Characterization of GaN Single Crystals Grown in a Na Flux,” Journal of Crystal Growth 186, pp. 8-12.
Yamane, Hisanori et al. (1998) “Na Flux Growth of GaN Single Crystals,” Journal of the Japanese Association for Crystal Growth 25(4), pp. 14-18, with partial English translation.
Waltereit, P. et al. (2000) “Nitride Semiconductors Free of Electrostatic Fields for Efficient White Light-Emitting Diodes,”Nature406, pp. 865-868.
Brandt, O. et al. (1999) “Critical Issues for the Growth of High-Quality (Al,Ga) N/GaN and GaN/(In,Ga)N Heterostructures on SiC(0001) by Molecular-Beam Epitaxy,” Applied Physics Letters 75(25), pp. 4019-4021.
Notification from Japanese Patent Office mailed Mar. 14, 2006, directed to JP Application No. 2003-503867, with partial English translation.
Chinese Office Action mailed Mar. 3, 2006, directed to corresponding CN Application No. 02821230.4.
Office Action mailed Mar. 24, 2006, directed to related U.S. Appl. No. 10/493,594.
Office Action mailed Apr. 20, 2006, directed to related U.S. Appl. No. 10/493,747.
Akasaki, I. et al. (1991). “Growth and Properties of Single Crystalline GaN Films by Hydride Vapor Phase Epitaxy,”Crystal Properties and Preparation32-34:154-157.
Chu, T. L. et al. (1974). “Crystal Growth and Characterization of Gallium Nitride,”J. Electrochem. Soc.: Solid-State Science and Technology 121-1:159-162.
Kaschner, A. et al. (1999). “Influence of Doping on the Lattice Dynamics of Gallium Nitride,”MRS Internet J. Nitride Semicond. Res. 4S1, G3.57.
Kim, S. T. et al. (1998).
Doradzinski Roman
Dwilinski Robert
Garczynski Jerzy
Kanbara Yasuo
Sierzputowski Leszek
Ammono SP. ZO. O.
Kunemund Robert
Morrison & Foerster / LLP
Nichia Corporation
Song Matthew
LandOfFree
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