Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – By reaction with substrate
Reexamination Certificate
2007-10-16
2007-10-16
Ghyka, Alexander (Department: 2812)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
By reaction with substrate
C438S769000, C438S903000, C118S725000, C257SE21285
Reexamination Certificate
active
09798445
ABSTRACT:
A method and apparatus for preventing N2O from becoming super critical during a high pressure oxidation stage within a high pressure oxidation furnace is disclosed. The method and apparatus utilize a catalyst to catalytically disassociate N2O as it enters the high pressure oxidation furnace. This catalyst is used in an environment of between five atmosphere to 25 atmosphere N2O and a temperature range of 600° to 750° C., which are the conditions that lead to the N2O going super critical. By preventing the N2O from becoming super critical, the reaction is controlled that prevents both temperature and pressure spikes. The catalyst can be selected from the group of noble transition metals and their oxides. This group can comprise palladium, platinum, iridium, rhodium, nickel, silver, and gold.
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Nitrades Oxides, Silicon Processing for the VLSI Era—vol. III, pp. 648-661.
Al-Shareef Husam N.
Chapek Dave
DeBoer Scott
Gealy Daniel
Thakur Randhir
Ghyka Alexander
TraskBritt PC
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