Apparatus for reshaping a patterned organic photoresist surface

Computer-aided design and analysis of circuits and semiconductor – Nanotechnology related integrated circuit design

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C430S005000, C378S035000, C216S067000, C250S492210, C250S492220, C438S009000, C438S485000, C438S513000, C438S710000, C438S717000, C438S798000, C700S120000, C700S121000

Reexamination Certificate

active

06931619

ABSTRACT:
The invention relates to a method of improving control over the dimensions of a patterned photoresist, which enables better control of the critical dimensions of a photomask or reticle which is fabricated using the patterned photoresist. In addition, the method may be used to enable improved control over the dimensions of a semiconductor device fabricated using a patterned photoresist. In particular, a patterned photoresist is treated with an etchant plasma to reshape the surface of the patterned photoresist, where reshaping includes the removal of “t”-topping at the upper surface of the patterned resist, the removal of standing waves present on patterned surfaces, and the removal of feet which may be present at the base of the patterned photoresist, where the photoresist contacts an underlying layer such as an ARC layer. The method is particularly useful for chemically amplified DUV photoresists, where the presence of “t”-topping, standing waves and foot formation is accentuated in the patterned photoresist as developed.

REFERENCES:
patent: 4326911 (1982-04-01), Howard et al.
patent: 4557797 (1985-12-01), Fuller et al.
patent: 4587184 (1986-05-01), Schneider-Gmelch et al.
patent: 4772539 (1988-09-01), Gillespie
patent: 5023164 (1991-06-01), Brunsvold et al.
patent: 5237037 (1993-08-01), Ebersole
patent: 5324620 (1994-06-01), Ebersole
patent: 5346799 (1994-09-01), Jeffries, III et al.
patent: 5541033 (1996-07-01), Blakeney et al.
patent: 5547814 (1996-08-01), Blakeney et al.
patent: 5554485 (1996-09-01), Dichiara et al.
patent: 5585012 (1996-12-01), Wu et al.
patent: 5602260 (1997-02-01), Blakeney et al.
patent: 5667650 (1997-09-01), Face et al.
patent: 5891350 (1999-04-01), Shan et al.
patent: 5964949 (1999-10-01), Savas
patent: 5980768 (1999-11-01), Abraham
patent: 5989979 (1999-11-01), Liu et al.
patent: 6066578 (2000-05-01), Gupta et al.
patent: 6078738 (2000-06-01), Garza et al.
patent: 6146793 (2000-11-01), Schaedeli et al.
patent: 6159863 (2000-12-01), Chen et al.
patent: 6180316 (2001-01-01), Kajita et al.
patent: 6277750 (2001-08-01), Pawlowski et al.
patent: 6316167 (2001-11-01), Angelopoulos et al.
patent: 6342452 (2002-01-01), Coronel et al.
patent: 6395639 (2002-05-01), Esry et al.
patent: 6423644 (2002-07-01), Nallan et al.
patent: 6440870 (2002-08-01), Nallan et al.
patent: 6455431 (2002-09-01), Hsieh et al.
patent: 6468915 (2002-10-01), Liu
patent: 6514667 (2003-02-01), Angelopoulos et al.
patent: 6518206 (2003-02-01), Kumar et al.
patent: 6527968 (2003-03-01), Wang et al.
patent: 6541164 (2003-04-01), Kumar et al.
patent: 6579806 (2003-06-01), Nallan et al.
patent: 6787054 (2004-09-01), Wang et al.
patent: 2002/0012876 (2002-01-01), Angelopoulos et al.
patent: 2002/0028582 (2002-03-01), Nallan et al.
patent: 2002/0086547 (2002-07-01), Mui et al.
patent: 2003/0003757 (2003-01-01), Nallan et al.
patent: 2003/0173333 (2003-09-01), Wang et al.
patent: 0840361 (1998-05-01), None
patent: 2302759 (1997-01-01), None
patent: WO 00/31782 (2000-06-01), None

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Apparatus for reshaping a patterned organic photoresist surface does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Apparatus for reshaping a patterned organic photoresist surface, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Apparatus for reshaping a patterned organic photoresist surface will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3461012

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.