Computer-aided design and analysis of circuits and semiconductor – Nanotechnology related integrated circuit design
Reexamination Certificate
2005-08-16
2005-08-16
Smith, Matthew (Department: 2825)
Computer-aided design and analysis of circuits and semiconductor
Nanotechnology related integrated circuit design
C430S005000, C378S035000, C216S067000, C250S492210, C250S492220, C438S009000, C438S485000, C438S513000, C438S710000, C438S717000, C438S798000, C700S120000, C700S121000
Reexamination Certificate
active
06931619
ABSTRACT:
The invention relates to a method of improving control over the dimensions of a patterned photoresist, which enables better control of the critical dimensions of a photomask or reticle which is fabricated using the patterned photoresist. In addition, the method may be used to enable improved control over the dimensions of a semiconductor device fabricated using a patterned photoresist. In particular, a patterned photoresist is treated with an etchant plasma to reshape the surface of the patterned photoresist, where reshaping includes the removal of “t”-topping at the upper surface of the patterned resist, the removal of standing waves present on patterned surfaces, and the removal of feet which may be present at the base of the patterned photoresist, where the photoresist contacts an underlying layer such as an ARC layer. The method is particularly useful for chemically amplified DUV photoresists, where the presence of “t”-topping, standing waves and foot formation is accentuated in the patterned photoresist as developed.
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Buxbaum Alex
Montgomery Melvin W.
Applied Materials Inc.
Church Shirley L.
Kik Phallaka
Smith Matthew
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