Chemistry: electrical and wave energy – Apparatus – Coating – forming or etching by sputtering
Patent
1987-12-04
1990-04-24
Niebling, John F.
Chemistry: electrical and wave energy
Apparatus
Coating, forming or etching by sputtering
118723, 118724, C23C 1308, C23C 1400
Patent
active
049197835
ABSTRACT:
For processing an object by the use of gas plasma generated in a predetermined gas, such as nitrogen, in cooperation of an electromagnetic wave with a static, an alternating, and a rotating magnetic field, an apparatus comprises a magnet around a first part of a reaction vessel to produce the magnetic field substantially parallel to an interface at which the first part is contiguous with a second part of the reaction vessel so as to confine the gas plasma within the first part. The interface may be open ultraviolet rays and charged or neutral particles produced by the gas plasma. Alternatively, an optical window may be disposed at the interface to use only the ultraviolet rays with the object held within the second part.
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Asamaki Tatsuo
Mito Hideo
Nakagawa Yukito
Sekiguchi Atsushi
Anelva Corporation
Marquis Steven P.
Niebling John F.
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